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IPG20N04S408ATMA1
Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 0.0076 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPG20N04S408ATMA1
Order Code2725852RL
Product RangeOptiMOS T2 Series
Also Known AsIPG20N04S4-08, SP000705582
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$7.890 |
| 500+ | HK$6.290 |
| 1000+ | HK$5.680 |
| 5000+ | HK$4.890 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$789.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPG20N04S408ATMA1
Order Code2725852RL
Product RangeOptiMOS T2 Series
Also Known AsIPG20N04S4-08, SP000705582
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id20A
On Resistance Rds(on)0.007ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Drain Source On State Resistance N Channel0.0076ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleTDSON
Gate Source Threshold Voltage Max3V
Power Dissipation Pd65W
No. of Pins8Pins
Power Dissipation N Channel65W
Power Dissipation P Channel65W
Operating Temperature Max175°C
Product RangeOptiMOS T2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.007ohm
Continuous Drain Current Id P Channel
20A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
65W
Product Range
OptiMOS T2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
20A
Continuous Drain Current Id N Channel
20A
Drain Source On State Resistance N Channel
0.0076ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TDSON
Power Dissipation Pd
65W
Power Dissipation N Channel
65W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000389