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IRF200B211
Power MOSFET, N Channel, 200 V, 12 A, 0.135 ohm, TO-220AB, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoIRF200B211
Order Code2709978
Product RangeStrongIRFET, HEXFET
Also Known AsSP001561622
Technical Datasheet
4,065 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$10.610 |
| 10+ | HK$6.690 |
| 100+ | HK$6.050 |
| 500+ | HK$5.490 |
| 1000+ | HK$4.570 |
| 5000+ | HK$4.480 |
Price for:Each
Minimum: 1
Multiple: 1
HK$10.61
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF200B211
Order Code2709978
Product RangeStrongIRFET, HEXFET
Also Known AsSP001561622
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id12A
Drain Source On State Resistance0.135ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.9V
Power Dissipation80W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStrongIRFET, HEXFET
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
80W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.135ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.9V
No. of Pins
3Pins
Product Range
StrongIRFET, HEXFET
MSL
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003266