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IRFHE4250DTRPBF
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 303 A, 303 A, 700 µohm
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ManufacturerINFINEON
Manufacturer Part NoIRFHE4250DTRPBF
Order Code2577175
Product RangeFastIRFET HEXFET Series
Also Known AsSP001564116
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFHE4250DTRPBF
Order Code2577175
Product RangeFastIRFET HEXFET Series
Also Known AsSP001564116
Technical Datasheet
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id N Channel303A
Continuous Drain Current Id P Channel303A
Transistor Case StylePQFN
No. of Pins32Pins
Power Dissipation N Channel156W
Power Dissipation P Channel156W
Operating Temperature Max150°C
Product RangeFastIRFET HEXFET Series
Qualification-
Technical Specifications
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id N Channel
303A
Transistor Case Style
PQFN
Power Dissipation N Channel
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id P Channel
303A
No. of Pins
32Pins
Power Dissipation P Channel
156W
Product Range
FastIRFET HEXFET Series
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001