Print Page
1,347 In Stock
Need more?
1347 Delivery in 3-4 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price |
|---|---|
| 1+ | HK$22.200 |
| 10+ | HK$12.500 |
| 100+ | HK$11.350 |
| 500+ | HK$11.180 |
| 1000+ | HK$10.960 |
Price for:Each
Minimum: 1
Multiple: 1
HK$22.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFI4410ZPBF
Order Code2580017
Product RangeHEXFET
Also Known AsSP001566742
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id43A
Drain Source On State Resistance7900µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation47W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for IRFI4410ZPBF
1 Product Found
Product Overview
IRFI4410ZPBF is a HEXFET® power MOSFET. Application includes high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Drain-to-source breakdown voltage is 100V min (VGS = 0V, ID = 250µA, TJ = 25°C)
- Drain-to-source leakage current is 20µA max (VDS = 100V, VGS = 0V, TJ = 25°C)
- Breakdown voltage temp coefficient is 95mV/°C typ (reference to 25°C, ID = 5mA)
- Maximum power dissipation is 47W (TC = 25°C), gate-to-source voltage is ±30V
- Rise time is 27ns typ (VDD = 65V, ID = 26A, RG= 2.7ohm, VGS = 10V)
- Fall time is 30ns typ (VDD = 65V, ID = 26A, RG= 2.7ohm, VGS = 10V)
- TO-220 Full-Pak package, operating junction temperature range from -55 to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
43A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
47W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
7900µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 2 - 1 year
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003221