IRFL4105PBF
Power MOSFET, N Channel, 55 V, 3.7 A, 0.045 ohm, SOT-223, Surface Mount
Product Information
Product Overview
The IRFL4105PBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with SOT or SOIC other packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Low static drain-to-source ON-resistance
Applications
Power Management
Technical Specifications
N Channel
3.7A
SOT-223
10V
2.1W
150°C
-
55V
0.045ohm
Surface Mount
4V
3Pins
-
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
Product Compliance Certificate