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ManufacturerINFINEON
Manufacturer Part NoIRG4IBC30UDPBF
Order Code8650470
Also Known AsSP001540446
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRG4IBC30UDPBF
Order Code8650470
Also Known AsSP001540446
Technical Datasheet
Continuous Collector Current17A
Collector Emitter Saturation Voltage1.95V
Power Dissipation45W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-220FP
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The IRG4IBC30UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, <gt/>200kHz in resonant mode. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes.
- HEXFRED™ anti-parallel diode minimizes switching losses and EMI
Applications
Lighting, Alternative Energy, Power Management, Maintenance & Repair
Technical Specifications
Continuous Collector Current
17A
Power Dissipation
45W
Transistor Case Style
TO-220FP
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.95V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002