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IRL40T209ATMA1
Power MOSFET, N Channel, 40 V, 300 A, 720 µohm, HSOF, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRL40T209ATMA1
Order Code3267855
Product RangeStrongIRFET
Also Known AsIRL40T209, SP001648026
Technical Datasheet
5,820 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$62.280 |
| 10+ | HK$46.450 |
| 100+ | HK$34.780 |
| 500+ | HK$32.010 |
| 1000+ | HK$29.380 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$62.28
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL40T209ATMA1
Order Code3267855
Product RangeStrongIRFET
Also Known AsIRL40T209, SP001648026
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id300A
Drain Source On State Resistance720µohm
Transistor Case StyleHSOF
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation500W
No. of Pins8Pins
Operating Temperature Max175°C
Product RangeStrongIRFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2018)
Product Overview
IRL40T209ATMA1 is a IRL40T209 StrongIRFET™ IR MOSFET. Potential applications include brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters.
- Improved gate and avalanche ruggedness
- Fully characterized capacitance and avalanche SOA
- Improved ID rating
- Continuous drain current is 586A (max, VGS=10V, TC=25°C (silicon limited))
- Pulsed drain current is 1200A (TC = 25°C), gate source voltage range from -20 to 20V (TC = 25°C)
- Power dissipation is 500W (TC = 25°C)
- Turn-off delay time is 190ns (typ, VDD=20V, VGS=4.5V, ID=30A, RG, ext=2.7ohm)
- Rise time is 230ns (typ, VDD=20V, VGS=4.5V, ID=30A, RG, ext=2.7ohm)
- Switching charge is 100nC (VDD=20V, ID=100A, VGS = 0 to 4.5V)
- Operating and storage temperature range from -55 to 175°C, PG-HSOF-8 package
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
300A
Transistor Case Style
HSOF
Rds(on) Test Voltage
10V
Power Dissipation
500W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
720µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
StrongIRFET
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001149