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No Longer Manufactured
Product Information
ManufacturerIXYS RF
Manufacturer Part NoIXFK21N100F
Order Code1347758
Technical Datasheet
Drain Source Voltage Vds1kV
Continuous Drain Current Id21A
Power Dissipation500W
Operating Frequency Min-
Operating Frequency Max500kHz
Transistor Case StyleTO-264AA
No. of Pins3Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXFK21N100F is a N-channel Power MOSFET designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation, laser drivers and RF amplifier applications. It offers low package inductance hence easy to drive and to protect.
- RF capable MOSFET
- Enhancement-mode
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped inductive switching rated
- High power density
Applications
Industrial, Power Management
Technical Specifications
Drain Source Voltage Vds
1kV
Power Dissipation
500W
Operating Frequency Max
500kHz
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
21A
Operating Frequency Min
-
Transistor Case Style
TO-264AA
Operating Temperature Max
150°C
Transistor Mounting
Through Hole
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01