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IXFN75N120SK
Silicon Carbide MOSFET, Single, N Channel, 75 A, 1.2 kV, 0.027 ohm, SOT-227B
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| Quantity | Price |
|---|---|
| 1+ | HK$1,000.530 |
| 5+ | HK$875.460 |
| 10+ | HK$725.380 |
| 50+ | HK$667.220 |
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Multiple: 1
HK$1,000.53
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN75N120SK
Order Code4353515
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id75A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.027ohm
Transistor Case StyleSOT-227B
No. of Pins4Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max3.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
75A
Drain Source On State Resistance
0.027ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
3.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
SOT-227B
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03