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IXTP6N100D2
Power MOSFET, N Channel, 1 kV, 6 A, 2.2 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | HK$76.290 |
| 5+ | HK$71.300 |
| 10+ | HK$66.300 |
| 50+ | HK$46.180 |
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Multiple: 1
HK$76.29
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTP6N100D2
Order Code3930296
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id6A
Drain Source On State Resistance2.2ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max-
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
N-channel depletion mode MOSFET suitable for use in audio amplifiers, start-up circuits, protection circuits, Ramp generators, current regulators and active loads applications.
- Normally ON mode
- Moulding epoxies meet UL94V-0 flammability classification
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
-
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
2.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001