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IXTY08N100D2
Power MOSFET, N Channel, 1 kV, 800 mA, 21 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | HK$37.740 |
| 10+ | HK$19.830 |
| 100+ | HK$18.720 |
| 500+ | HK$17.610 |
| 1000+ | HK$17.580 |
Price for:Each
Minimum: 1
Multiple: 1
HK$37.74
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXTY08N100D2
Order Code4060243
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id800mA
Drain Source On State Resistance21ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max4V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
800mA
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
0V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
21ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005443