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2N7002PS,115
Dual MOSFET, N Channel, 60 V, 320 mA, 1 ohm
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| Quantity | Price |
|---|---|
| 500+ | HK$1.190 |
| 1500+ | HK$0.942 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
HK$595.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002PS,115
Order Code1859846RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id320mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)1ohm
Continuous Drain Current Id N Channel320mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.75V
No. of Pins6Pins
Power Dissipation Pd320mW
Power Dissipation N Channel320mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002PS is a dual N-channel enhancement-mode MOSFET designed in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuits.
- Logic-level compatible
- Very fast switching
- AEC-Q101 qualified
Applications
Automotive, Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
320mA
On Resistance Rds(on)
1ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
1ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.75V
Power Dissipation Pd
320mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
320mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
320mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005