Print Page
GANE3R9-150QBAZ
Gallium Nitride (GaN) Transistor, 150 V, 100 A, 3900 µohm, 20 nC, VQFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoGANE3R9-150QBAZ
Order Code4414367RL
Your Part Number
Technical Datasheet
2,290 In Stock
Need more?
2290 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 10+ | HK$85.350 |
| 50+ | HK$68.580 |
| 100+ | HK$63.160 |
| 250+ | HK$61.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
HK$853.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Technical Specifications
Drain Source Voltage Vds
150V
Drain Source On State Resistance
3900µohm
No. of Pins
25Pins
Continuous Drain Current Id
100A
Typical Gate Charge
20nC
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001