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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX-HB-GAN3R2-BSC
Order Code4544016
Technical Datasheet
Silicon ManufacturerNexperia
Silicon Core NumberGAN3R2-100CBE
Kit Application TypePower Management
Application Sub TypeeGaN FET Driver
Kit ContentsHalf Bridge Evaluation Board GAN3R2-100CBE
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
NX-HB-GAN3R2-BSC is a half-bridge evaluation board that provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high/low level inputs. The voltage input and output can operate at up to 60VDC, with a power output > 350W.
- 150°C max GAN3R2-100CBE junction temperature
- 12VDC nom, 50mA auxiliary supply
- Logic inputs: nominal 0 - 5V, 50 ohm terminated SMA
Technical Specifications
Silicon Manufacturer
Nexperia
Kit Application Type
Power Management
Kit Contents
Half Bridge Evaluation Board GAN3R2-100CBE
SVHC
No SVHC (27-Jun-2024)
Silicon Core Number
GAN3R2-100CBE
Application Sub Type
eGaN FET Driver
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:84733020
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001