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PMGD280UN,115
Dual MOSFET, N Channel, 20 V, 200 mA, 0.28 ohm
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| Quantity | Price |
|---|---|
| 100+ | HK$0.914 |
| 500+ | HK$0.781 |
| 1500+ | HK$0.766 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$91.40
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMGD280UN,115
Order Code1758098RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id200mA
Continuous Drain Current Id N Channel200mA
On Resistance Rds(on)0.28ohm
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.28ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max700mV
No. of Pins6Pins
Power Dissipation Pd400mW
Power Dissipation N Channel400mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMGD280UN,115 is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.
- Fast switching speed
- Low ON-state resistance
- Low threshold voltage
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
200mA
Continuous Drain Current Id P Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
700mV
Power Dissipation Pd
400mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
200mA
On Resistance Rds(on)
0.28ohm
Drain Source On State Resistance N Channel
0.28ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
400mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907