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PSMN2R0-100SSFJ
Power MOSFET, N Channel, 100 V, 267 A, 0.00163 ohm, LFPAK88, Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | HK$35.240 |
| 500+ | HK$33.890 |
| 1000+ | HK$32.540 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$3,524.00
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN2R0-100SSFJ
Order Code4147452RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id267A
Drain Source On State Resistance0.00163ohm
Transistor Case StyleLFPAK88
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation341W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
267A
Transistor Case Style
LFPAK88
Rds(on) Test Voltage
10V
Power Dissipation
341W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.00163ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001