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                    • Reduced Price
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. RF FETs
                      Print Page

                      AFT20S015GNR1

                      RF FET Transistor, 65 V, 11 W, 1.805 GHz, 2.7 GHz, TO-270G

                      NXP AFT20S015GNR1
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerNXP
                      Manufacturer Part NoAFT20S015GNR1
                      Order Code2890592
                      Product RangeAFT20S015GN
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      Packaging Options
                      201 In Stock

                      Need more?

                      201 Delivery in 3-4 Business Days(UK stock)
                      QuantityPrice
                      1+HK$226.870
                      5+HK$199.430
                      10+HK$171.990
                      50+HK$170.430
                      100+HK$168.870
                      250+HK$165.500
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 1
                      Multiple: 1
                      HK$226.87
                      Add Part No. / Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerNXP
                      Manufacturer Part NoAFT20S015GNR1
                      Order Code2890592
                      Product RangeAFT20S015GN
                      Technical Datasheet

                      Data Sheet

                      Drain Source Voltage Vds65V
                      Continuous Drain Current Id-
                      Power Dissipation11W
                      Operating Frequency Min1.805GHz
                      Operating Frequency Max2.7GHz
                      Transistor Case StyleTO-270G
                      No. of Pins2Pins
                      Operating Temperature Max150°C
                      Channel TypeN Channel
                      Transistor MountingSurface Mount
                      Product RangeAFT20S015GN
                      MSLMSL 3 - 168 hours
                      SVHCNo SVHC (27-Jun-2024)

                      Product Overview

                      • N channel enhancement mode Lateral MOSFET, RF power LDMOS transistor
                      • Greater negative gate--source voltage range for improved Class C operation
                      • Designed for digital predistortion error correction systems
                      • Optimized for doherty applications
                      • 17.6dB typical power gain (VDD = 28VDC, IDQ = 132mA, Pout = 1.5W, TA = 25°C)
                      • Drain efficiency is 22.0% typical (VDD = 28VDC, IDQ = 132mA, Pout = 1.5W, TA = 25°C)
                      • Adjacent channel power ratio is -44.0dBc typical (VDD = 28VDC, IDQ = 132mA, Pout = 1.5W, TA = 25°C)
                      • Typical input return loss is -14dB (VDD = 28VDC, IDQ = 132mA, Pout = 1.5W, TA = 25°C)
                      • 0.05dB typical gain flatness in 60MHz bandwidth (at Pout = 1.5W Avg.)
                      • 2 bit TO--270G package, operating junction temperature range from -40°C to +225°C

                      Technical Specifications

                      Drain Source Voltage Vds

                      65V

                      Power Dissipation

                      11W

                      Operating Frequency Max

                      2.7GHz

                      No. of Pins

                      2Pins

                      Channel Type

                      N Channel

                      Product Range

                      AFT20S015GN

                      SVHC

                      No SVHC (27-Jun-2024)

                      Continuous Drain Current Id

                      -

                      Operating Frequency Min

                      1.805GHz

                      Transistor Case Style

                      TO-270G

                      Operating Temperature Max

                      150°C

                      Transistor Mounting

                      Surface Mount

                      MSL

                      MSL 3 - 168 hours

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      United States
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (27-Jun-2024)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.0003
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