Print Page
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP5150GNR1
Order Code2985235
Technical Datasheet
Drain Source Voltage Vds139V
Continuous Drain Current Id-
Power Dissipation952W
Operating Frequency Min1.8MHz
Operating Frequency Max600MHz
Transistor Case StyleTO-270WBG
No. of Pins4Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Product Overview
- RF power LDMOS transistor
- Wide operating frequency range from 1.8 to 600MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection circuitry
- Integrated stability enhancements
- Low thermal resistance
- High ruggedness N-channel enhancement mode lateral MOSFET
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
139V
Power Dissipation
952W
Operating Frequency Max
600MHz
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
TO-270WBG
Operating Temperature Max
225°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.007749