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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VS25NR1
Order Code2776252RL
Technical Datasheet
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation-
Operating Frequency Min1.8MHz
Operating Frequency Max2000MHz
Transistor Case StyleTO-270
No. of Pins2Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (17-Jan-2023)
Product Overview
The MRFE6VS25NR1 is a N-channel RF Power LDMOS Transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
- High ruggedness
- Enhancement-mode lateral MOSFET
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit
Technical Specifications
Drain Source Voltage Vds
133VDC
Power Dissipation
-
Operating Frequency Max
2000MHz
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
TO-270
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003