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Product Information
ManufacturerONSEMI
Manufacturer Part No2N6284G
Order Code2535604
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd160W
DC Collector Current20A
RF Transistor CaseTO-3
No. of Pins2Pins
DC Current Gain hFE100hFE
Transistor MountingThrough Hole
Operating Temperature Max200°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The 2N6284G is a NPN Darlington bipolar Power Transistor with monolithic construction, built-in base-emitter shunt resistors, designed for general-purpose amplifier and low-frequency switching applications.
- High DC current gain
- 1.09°C/W Junction-to-case thermal resistance
Applications
Audio, Industrial
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
160W
RF Transistor Case
TO-3
DC Current Gain hFE
100hFE
Operating Temperature Max
200°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
20A
No. of Pins
2Pins
Transistor Mounting
Through Hole
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Alternatives for 2N6284G
2 Products Found
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01202