2N7000TA
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole
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| Quantity | Price |
|---|---|
| 5+ | HK$3.210 |
| 10+ | HK$2.390 |
| 100+ | HK$1.240 |
| 500+ | HK$0.995 |
| 2000+ | HK$0.911 |
| 6000+ | HK$0.827 |
| 16000+ | HK$0.743 |
| 30000+ | HK$0.668 |
Product Information
Product Overview
The 2N7000TA is a N-channel enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Fast switching
- Lower input capacitance
- Extended safe operating area
- Improved inductive ruggedness
- Improved high temperature reliability
Applications
Power Management, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
200mA
TO-226AA
10V
400mW
150°C
-
No SVHC (27-Jun-2024)
60V
5ohm
Through Hole
3.9V
3Pins
-
-
Technical Docs (2)
Alternatives for 2N7000TA
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate