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FCH029N65S3-F155
Power MOSFET, N Channel, 650 V, 75 A, 0.0237 ohm, TO-247, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFCH029N65S3-F155
Order Code3588812
Product RangeSuperFET III
Technical Datasheet
119 In Stock
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| Quantity | Price |
|---|---|
| 1+ | HK$140.860 |
| 5+ | HK$129.880 |
| 10+ | HK$118.890 |
| 50+ | HK$118.750 |
| 100+ | HK$111.860 |
| 250+ | HK$101.360 |
Price for:Each
Minimum: 1
Multiple: 1
HK$140.86
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFCH029N65S3-F155
Order Code3588812
Product RangeSuperFET III
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id75A
Drain Source On State Resistance0.0237ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation463W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET III
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
463W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.0237ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
SuperFET III
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001