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FDG6303N
Dual MOSFET, N Channel, 25 V, 500 mA, 0.34 ohm
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| Quantity | Price |
|---|---|
| 100+ | HK$1.450 |
| 500+ | HK$1.430 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$145.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6303N
Order Code1611233RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Continuous Drain Current Id500mA
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.34ohm
Continuous Drain Current Id N Channel500mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.34ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6303N is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- Gate-source Zener for ESD ruggedness
- Compact industry standard surface-mount-package
- -0.5 to 8V Gate to source voltage
- 0.5A Continuous drain/output current
- 1.5A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
500mA
On Resistance Rds(on)
0.34ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.34ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
300mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
500mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDG6303N
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001