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FDG6317NZ
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.3 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDG6317NZ
Order Code2453407RL
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$1.780 |
| 500+ | HK$1.030 |
| 1500+ | HK$1.010 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$178.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6317NZ
Order Code2453407RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id700mA
On Resistance Rds(on)0.3ohm
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.3ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.3ohm
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1.2V
No. of Pins6Pins
Power Dissipation Pd300mW
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (23-Jan-2024)
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Product Overview
The FDG6317NZ is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package.
- Low gate charge
- Gate-source Zener for ESD ruggedness (1.6kV human body model)
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount package
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.3ohm
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance N Channel
0.3ohm
Drain Source On State Resistance P Channel
0.3ohm
Gate Source Threshold Voltage Max
1.2V
Power Dissipation Pd
300mW
Power Dissipation P Channel
300mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
700mA
Continuous Drain Current Id N Channel
700mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-70
No. of Pins
6Pins
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001035