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FDS4559
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 4.5 A, 4.5 A, 0.055 ohm
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| Quantity | Price |
|---|---|
| 100+ | HK$2.400 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$240.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4559
Order Code1471052RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.055ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.055ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.055ohm
Gate Source Threshold Voltage Max2.2V
Transistor Case StyleSOIC
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backlight inverter.
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
4.5A
On Resistance Rds(on)
0.055ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.055ohm
Drain Source On State Resistance P Channel
0.055ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
MSL
-
Technical Docs (3)
Alternatives for FDS4559
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000209