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FDS6912A
Dual MOSFET, N Channel, 30 V, 6 A, 0.019 ohm
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| Quantity | Price |
|---|---|
| 100+ | HK$3.790 |
| 500+ | HK$3.050 |
| 1000+ | HK$2.780 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$379.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6912A
Order Code1095019RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id6A
Continuous Drain Current Id N Channel6A
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.019ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Transistor Case StyleSOIC
Power Dissipation Pd1.6W
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6912A is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate source voltage (VGSS)
- 78°C/W thermal resistance, junction to ambient
- 40°C/W Thermal resistance, junction to case
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
6A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.019ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.019ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.9V
Power Dissipation Pd
1.6W
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000223