Print Page
FDS6912A
Dual MOSFET, N Channel, 30 V, 6 A, 0.019 ohm
Image is for illustrative purposes only. Please refer to product description.
7,853 In Stock
Need more?
757 Delivery in 1-2 Business Days(SG stock)
7096 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | HK$4.160 |
| 500+ | HK$3.260 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$416.00
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6912A
Order Code1095019RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id6A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.019ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6912A is a 30V Dual N-channel logic level PowerTrench® MOSFET produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. This product is general usage and suitable for many different applications.
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V gate source voltage (VGSS)
- 78°C/W thermal resistance, junction to ambient
- 40°C/W Thermal resistance, junction to case
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.019ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.019ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.9V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDS6912A
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000223