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MJD112T4G
Darlington Transistor, NPN, 3 Pins
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| Quantity | Price |
|---|---|
| 5+ | HK$7.320 |
| 10+ | HK$4.880 |
| 100+ | HK$3.290 |
| 500+ | HK$2.640 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
HK$36.60
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD112T4G
Order Code2533156
Technical Datasheet
Transistor PolarityNPN
No. of Pins3Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The MJD112T4G is a 2A NPN bipolar power Darlington Transistor designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- Surface-mount replacements for TIP110 to TIP117 series
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Transistor Mounting
Surface Mount
Product Range
-
SVHC
Lead (27-Jun-2024)
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426