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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT4403LT1G
Order Code1653705RL
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current600mA
Power Dissipation300mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency200MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Product Overview
The MMBT4403LT1G is a -40V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
- Halogen-free/BFR-free
- -40VDC Collector to base voltage (VCBO)
- -5VDC Emitter to base voltage (VEBO)
- -900mADC Peak collector current
- 556°C/W Thermal resistance, junction to ambient
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
MMBTxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
300mW
Transistor Mounting
Surface Mount
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09