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MMBT5550
Bipolar (BJT) Single Transistor, NPN, 140 V, 600 mA, 225 mW, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5550
Order Code1467901RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max140V
Continuous Collector Current600mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MMBT5550
2 Products Found
Product Overview
The MMBT5550 is a NPN Bipolar Transistor designed for general purpose high voltage amplifiers and gas discharge display drivers.
- -55 to 150°C Junction temperature range
Applications
Multimedia, Power Management, Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
140V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
60hFE
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121