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Product Information
ManufacturerONSEMI
Manufacturer Part NoNJT4030PT1G
Order Code2464103
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current3A
Power Dissipation2W
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency160MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Product Overview
The NJT4030PT1G is a 3A bipolar PNP Power Transistor ideal device for high speed switching applications where power saving is a concern. It is the combination of low saturation voltage and high gain.
- Low collector-emitter saturation voltage
- High DC current gain
- High current-gain bandwidth product
- Halogen-free
- Minimized power loss
- Very low current requirements
- Ideal for high frequency designs
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
3A
Transistor Case Style
SOT-223
No. of Pins
4Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
MSL 3 - 168 hours
Collector Emitter Voltage Max
40V
Power Dissipation
2W
Transistor Mounting
Surface Mount
Transition Frequency
160MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for NJT4030PT1G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002