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NTMD3P03R2G
PFET S08D 30V 0.085R TR
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Available to Order
Manufacturer Standard Lead Time: 19 week(s)
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| Quantity | Price |
|---|---|
| 2500+ | HK$3.250 |
| 7500+ | HK$3.200 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
HK$8,125.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMD3P03R2G
Order Code2442236
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.05A
Drain Source On State Resistance0.085ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation2W
No. of Pins8Pins
Operating Temperature Max150°C
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.05A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001