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FDC6327C
Dual MOSFET, N and P Channel, 20 V, 20 V, 2.7 A, 1.9 A, 0.08 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDC6327C
Order Code9844856RL
Product RangePowerTrench Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | HK$4.340 |
| 500+ | HK$3.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$434.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6327C
Order Code9844856RL
Product RangePowerTrench Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id1.9A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.069ohm
Continuous Drain Current Id N Channel2.7A
Continuous Drain Current Id P Channel1.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.08ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.17ohm
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product RangePowerTrench Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6327C is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and DC-to-DC converter applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
1.9A
On Resistance Rds(on)
0.069ohm
Continuous Drain Current Id P Channel
1.9A
Drain Source On State Resistance N Channel
0.08ohm
Drain Source On State Resistance P Channel
0.17ohm
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
960mW
Power Dissipation P Channel
960mW
Product Range
PowerTrench Series
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
2.7A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC6327C
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000049