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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8960C
Order Code1228338
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel35V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for FDS8960C
1 Product Found
Product Overview
The FDS8960C is a dual N/P-channel enhancement-mode MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
35V
Continuous Drain Current Id N Channel
7A
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000218