Print Page
Image is for illustrative purposes only. Please refer to product description.
13,216 In Stock
Need more?
13216 Delivery in 3-4 Business Days(UK stock)
Quantity | Price |
---|---|
100+ | HK$4.730 |
500+ | HK$3.760 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$473.00
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD122T4G
Order Code2317578RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
Continuous Collector Current8A
DC Collector Current8A
Power Dissipation20W
RF Transistor CaseTO-252 (DPAK)
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transition Frequency4MHz
Transistor MountingSurface Mount
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series.
- Lead formed for surface-mount applications in plastic sleeves
- Monolithic construction with built-in base-emitter shunt resistors
- Complementary pairs simplifies designs
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Continuous Collector Current
8A
Power Dissipation
20W
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE
1000hFE
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage Max
100V
Power Dissipation Pd
20W
DC Collector Current
8A
RF Transistor Case
TO-252 (DPAK)
No. of Pins
3Pins
Transition Frequency
4MHz
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
-
Technical Docs (2)
Alternatives for MJD122T4G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033