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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD350T4G
Order Code2464106RL
Product RangeMJxxxx
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max300V
Continuous Collector Current500mA
Power Dissipation15W
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency10MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product RangeMJxxxx
QualificationAEC-Q101
SVHCLead (27-Jun-2024)
Product Overview
The MJD350T4G is a 0.5A PNP bipolar high voltage Power Transistor designed for line operated audio output amplifier, switch-mode power supply drivers and other switching applications.
- Electrically similar to popular MJE340 and MJE350
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive, Audio
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
500mA
Transistor Case Style
TO-252 (DPAK)
No. of Pins
4Pins
DC Current Gain hFE Min
30hFE
Product Range
MJxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
300V
Power Dissipation
15W
Transistor Mounting
Surface Mount
Transition Frequency
10MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000449