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MJD44E3T4G
Darlington Transistor, NPN, 80 V, 1.75 W, 10 A, TO-252 (DPAK), 3 Pins
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| Quantity | Price |
|---|---|
| 100+ | HK$3.520 |
| 500+ | HK$2.870 |
| 1000+ | HK$2.600 |
| 5000+ | HK$2.210 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$352.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD44E3T4G
Order Code2727980RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Continuous Collector Current10A
Power Dissipation Pd1.75W
DC Collector Current10A
Power Dissipation20W
RF Transistor CaseTO-252 (DPAK)
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE1000hFE
Transition Frequency-
Transistor MountingSurface Mount
DC Current Gain hFE Min1000hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
1.75W
Power Dissipation
20W
Transistor Case Style
TO-252 (DPAK)
DC Current Gain hFE
1000hFE
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage Max
80V
Continuous Collector Current
10A
DC Collector Current
10A
RF Transistor Case
TO-252 (DPAK)
No. of Pins
3Pins
Transition Frequency
-
DC Current Gain hFE Min
1000hFE
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000457