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MJD6039T4G
Darlington Transistor, Darlington, NPN, 80 V, 20 W, 4 A, TO-252 (DPAK), 3 Pins
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| Quantity | Price |
|---|---|
| 100+ | HK$4.530 |
| 500+ | HK$3.550 |
| 1000+ | HK$3.190 |
| 5000+ | HK$3.020 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$453.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD6039T4G
Order Code2774792RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Power Dissipation Pd20W
Continuous Collector Current4A
DC Collector Current4A
Power Dissipation20W
Transistor Case StyleTO-252 (DPAK)
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE2500hFE
Transition Frequency-
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min1000hFE
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Continuous Collector Current
4A
Power Dissipation
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
2500hFE
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
1000hFE
Qualification
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
20W
DC Collector Current
4A
Transistor Case Style
TO-252 (DPAK)
No. of Pins
3Pins
Transition Frequency
-
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426