NDS0610
Power MOSFET, P Channel, 60 V, 120 mA, 10 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 3000+ | HK$0.675 |
| 9000+ | HK$0.670 |
| 24000+ | HK$0.664 |
| 45000+ | HK$0.658 |
Product Information
Product Overview
The NDS0610 is a P-channel enhancement-mode FET produced using high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
- Voltage controlled p-channel small signal switch
- High density cell design for low RDS (ON)
- High saturation current
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
120mA
SOT-23
10V
360mW
150°C
-
No SVHC (27-Jun-2024)
60V
10ohm
Surface Mount
1.7V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate