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NJVMJB45H11T4G
Bipolar (BJT) Single Transistor, PNP, 80 V, 10 A, 50 W, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | HK$7.680 |
| 500+ | HK$5.590 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$768.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNJVMJB45H11T4G
Order Code3368645RL
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current10A
Power Dissipation50W
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency40MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
10A
Transistor Case Style
TO-263 (D2PAK)
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
80V
Power Dissipation
50W
Transistor Mounting
Surface Mount
Transition Frequency
40MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004