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NTMFWS1D5N08XT1G
Power MOSFET, N Channel, 80 V, 253 A, 0.00143 ohm, DFNW-EP, Surface Mount
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| Quantity | Price |
|---|---|
| 100+ | HK$16.030 |
| 500+ | HK$12.160 |
| 1500+ | HK$11.410 |
| 3000+ | HK$11.290 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$1,603.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFWS1D5N08XT1G
Order Code4305075RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id253A
Drain Source On State Resistance0.00143ohm
Transistor Case StyleDFNW-EP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation194W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
253A
Transistor Case Style
DFNW-EP
Rds(on) Test Voltage
10V
Power Dissipation
194W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.00143ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001