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NTZD3154NT1G
Dual MOSFET, N Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
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| Quantity | Price |
|---|---|
| 100+ | HK$1.070 |
| 500+ | HK$1.050 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$107.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTZD3154NT1G
Order Code2533209RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id540mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.4ohm
Continuous Drain Current Id N Channel540mA
Continuous Drain Current Id P Channel540mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.4ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.4ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleSOT-563
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications.
- Low RDS (ON) improving system efficiency
- Low threshold voltage
- Small footprint
- ESD protected gate
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
540mA
On Resistance Rds(on)
0.4ohm
Continuous Drain Current Id P Channel
540mA
Drain Source On State Resistance N Channel
0.4ohm
Drain Source On State Resistance P Channel
0.4ohm
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
540mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454