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HP8KE6TB1
Dual MOSFET, Dual N Channel, 100 V, 17 A, 0.054 ohm
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487 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$7.480 |
| 500+ | HK$5.950 |
| 1000+ | HK$5.390 |
| 5000+ | HK$5.290 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
HK$748.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoHP8KE6TB1
Order Code4246782RL
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel17A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.054ohm
Transistor Case StyleHSOP
No. of Pins8Pins
Power Dissipation N Channel21W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Transistor Case Style
HSOP
Power Dissipation N Channel
21W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id N Channel
17A
Drain Source On State Resistance N Channel
0.054ohm
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074