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SCT3160KWATL
Silicon Carbide MOSFET, Single, N Channel, 17 A, 1.2 kV, 0.208 ohm, TO-263
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Packaging Options
1,000 In Stock
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| Quantity | Price |
|---|---|
| 10+ | HK$51.870 |
| 50+ | HK$47.530 |
| 100+ | HK$43.190 |
| 250+ | HK$42.330 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
HK$518.70
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3160KWATL
Order Code4410745RL
Technical Datasheet
Continuous Drain Current Id17A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.208ohm
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation100W
Operating Temperature Max175°C
Technical Specifications
Continuous Drain Current Id
17A
Drain Source On State Resistance
0.208ohm
Rds(on) Test Voltage
18V
Power Dissipation
100W
Drain Source Voltage Vds
1.2kV
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000013