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MJD112T4
Darlington Transistor, NPN, 100 V, 20 W, 2 A, TO-252 (DPAK), 3 Pins
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| Quantity | Price |
|---|---|
| 5+ | HK$7.070 |
| 10+ | HK$4.980 |
| 100+ | HK$3.280 |
| 500+ | HK$2.500 |
| 1000+ | HK$2.030 |
| 5000+ | HK$1.790 |
Price for:Each
Minimum: 5
Multiple: 5
HK$35.35
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJD112T4
Order Code2341708
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
DC Collector Current2A
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The MJD112T4 is a NPN complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It has monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
- Good hFE linearity
- High fT frequency
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation Pd
20W
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage V(br)ceo
100V
DC Collector Current
2A
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00049