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PD57006-E
RF FET Transistor, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, PowerSO-10RF
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD57006-E
Order Code1293688
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id1A
Power Dissipation20W
Transistor Case StylePowerSO-10RF
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Product Overview
The PD57006-E is a N-channel RF Power Transistor designed for high gain, broad band applications. It operates at 28V in common source mode at frequencies of up to 1GHz. It boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for car mobile radios. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
- Excellent thermal stability
- Common source configuration
- Enhancement-mode lateral field-effect transistor
Applications
Industrial, Commercial, Power Management
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
20W
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
Continuous Drain Current Id
1A
Transistor Case Style
PowerSO-10RF
Channel Type
N Channel
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003