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PD57060-E
RF FET Transistor, 65 V, 7 A, 79 W, 1 GHz, PowerSO-10RF
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6 In Stock
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6 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 1+ | HK$448.650 |
| 5+ | HK$440.470 |
| 10+ | HK$432.290 |
| 50+ | HK$424.110 |
Price for:Each
Minimum: 1
Multiple: 1
HK$448.65
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoPD57060-E
Order Code3129596
Technical Datasheet
Drain Source Voltage Vds65V
Continuous Drain Current Id7A
Power Dissipation79W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StylePowerSO-10RF
No. of Pins-
Operating Temperature Max165°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
65V
Power Dissipation
79W
Operating Frequency Max
1GHz
No. of Pins
-
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
7A
Operating Frequency Min
-
Transistor Case Style
PowerSO-10RF
Operating Temperature Max
165°C
Transistor Mounting
Surface Mount
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00042