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                    • Reduced Price
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Silicon Carbide (SiC) MOSFETs & Modules
                      Print Page

                      SCT30N120

                      Silicon Carbide MOSFET, Single, N Channel, 40 A, 1.2 kV, 0.08 ohm, HiP247

                      STMICROELECTRONICS SCT30N120
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoSCT30N120
                      Order Code2451116
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      834 In Stock

                      Need more?

                      834 Delivery in 3-4 Business Days(UK stock)
                      QuantityPrice
                      1+HK$181.420
                      5+HK$171.680
                      10+HK$161.940
                      50+HK$152.190
                      100+HK$142.450
                      250+HK$132.700
                      Price for:Each
                      Minimum: 1
                      Multiple: 1
                      HK$181.42
                      Add Part No. / Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerSTMICROELECTRONICS
                      Manufacturer Part NoSCT30N120
                      Order Code2451116
                      Technical Datasheet

                      Data Sheet

                      MOSFET Module ConfigurationSingle
                      Channel TypeN Channel
                      Continuous Drain Current Id40A
                      Drain Source Voltage Vds1.2kV
                      Drain Source On State Resistance0.08ohm
                      Transistor Case StyleHiP247
                      No. of Pins3Pins
                      Rds(on) Test Voltage20V
                      Gate Source Threshold Voltage Max2.6V
                      Power Dissipation270W
                      Operating Temperature Max200°C
                      Product Range-
                      SVHCNo SVHC (21-Jan-2025)

                      Product Overview

                      The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.

                      • Very tight variation of on-resistance vs. temperature
                      • Slight variation of switching losses vs. temperature
                      • Very high operating temperature capability (200°C)
                      • Very fast and robust intrinsic body diode
                      • Low capacitance

                      Applications

                      Industrial, Power Management

                      Warnings

                      Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

                      Technical Specifications

                      MOSFET Module Configuration

                      Single

                      Continuous Drain Current Id

                      40A

                      Drain Source On State Resistance

                      0.08ohm

                      No. of Pins

                      3Pins

                      Gate Source Threshold Voltage Max

                      2.6V

                      Operating Temperature Max

                      200°C

                      SVHC

                      No SVHC (21-Jan-2025)

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds

                      1.2kV

                      Transistor Case Style

                      HiP247

                      Rds(on) Test Voltage

                      20V

                      Power Dissipation

                      270W

                      Product Range

                      -

                      Technical Docs (2)

                      Product Change Notice EN

                      Technical Data Sheet EN

                      Legislation and Environmental

                      Country of Origin:
                      Country in which last significant manufacturing process was carried outCountry of Origin:
                      China
                      Country in which last significant manufacturing process was carried out
                      Tariff No:85412900
                      US ECCN:EAR99
                      EU ECCN:NLR
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (21-Jan-2025)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

                      Weight (kg):.008051
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