Print Page
STP34NM60ND
Power MOSFET, N Channel, 600 V, 29 A, 0.097 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 42 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | HK$52.200 |
| 10+ | HK$47.110 |
| 100+ | HK$46.610 |
| 500+ | HK$46.570 |
| 1000+ | HK$46.530 |
Price for:Each
Minimum: 1
Multiple: 1
HK$52.20
Add Part No. / Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP34NM60ND
Order Code2098318
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id29A
Drain Source On State Resistance0.097ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The STP34NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ V Power MOSFET produced using ST's MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low ON-resistance that is unrivalled among silicon-based Power MOSFET and superior switching performance with intrinsic fast-recovery body diode.
- The worldwide best RDS (ON) area amongst the fast recovery diode device
- Low gate input resistance
- Extremely high dV/dt and avalanche capabilities
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
29A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.097ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.19