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HN4A51J(TE85L,F)
Bipolar Transistor Array, Dual PNP, 120 V, 100 mA
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ManufacturerTOSHIBA
Manufacturer Part NoHN4A51J(TE85L,F)
Order Code4415967RL
Also Known AsHN4A51J, HN4A51J(TE85L
Technical Datasheet
Packaging Options
2,400 In Stock
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| Quantity | Price |
|---|---|
| 100+ | HK$1.800 |
| 500+ | HK$1.360 |
| 1000+ | HK$0.998 |
| 5000+ | HK$0.781 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
HK$180.00
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoHN4A51J(TE85L,F)
Order Code4415967RL
Also Known AsHN4A51J, HN4A51J(TE85L
Technical Datasheet
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP120V
Continuous Collector Current NPN-
Continuous Collector Current PNP100mA
Power Dissipation NPN-
Power Dissipation PNP300mW
DC Current Gain hFE Min NPN-
DC Current Gain hFE Min PNP200hFE
No. of Pins5Pins
Operating Temperature Max150°C
Transition Frequency NPN-
Transition Frequency PNP100MHz
Technical Specifications
Collector Emitter Voltage Max NPN
-
Continuous Collector Current NPN
-
Power Dissipation NPN
-
DC Current Gain hFE Min NPN
-
No. of Pins
5Pins
Transition Frequency NPN
-
Collector Emitter Voltage Max PNP
120V
Continuous Collector Current PNP
100mA
Power Dissipation PNP
300mW
DC Current Gain hFE Min PNP
200hFE
Operating Temperature Max
150°C
Transition Frequency PNP
100MHz
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000014