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TK5R1P08QM,RQ(S2
Power MOSFET, N Channel, 80 V, 105 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTK5R1P08QM,RQ(S2
Order Code4173128
Product RangeU-MOSX-H Series
Also Known AsTK5R1P08QM, TK5R1P08QM,RQ
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | HK$15.290 |
| 10+ | HK$10.610 |
| 100+ | HK$8.390 |
| 500+ | HK$7.080 |
| 1000+ | HK$5.770 |
| 5000+ | HK$5.570 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
HK$15.29
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTK5R1P08QM,RQ(S2
Order Code4173128
Product RangeU-MOSX-H Series
Also Known AsTK5R1P08QM, TK5R1P08QM,RQ
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id105A
Drain Source On State Resistance0.0042ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation104W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeU-MOSX-H Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
105A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
104W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
U-MOSX-H Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033